🎓 Students & Graduates curious about semiconductors and looking to build a future in VLSI, chip fabrication, or related fields.
💼 Early-career professionals aiming to deepen their technical knowledge and explore new opportunities in the semiconductor industry.
🛠️ Engineers & Designers interested in the latest trends in chip manufacturing, AI, 5G, and fabrication technologies.
💡 Tech Enthusiasts & Hobbyists wanting to understand how chips power modern devices and innovations.
📚 Educators & Researchers seeking fresh insights into semiconductor processes and career pathways.
🔹Why Attend? 🧩 What Will Be Covered?
🎁 Demystify Chip Packaging Go beyond silicon! Understand how raw dies are transformed into functional, robust, and compact packages ready for deployment in everything from smartphones to satellites.
🏗️ Peek Inside Packaging Processes Get behind-the-scenes insights into how packaging technologies enable performance, power, and protection.
🎓 Unlock Career & Innovation Paths Discover career roles in assembly, packaging R&D, reliability testing, and failure analysis — and how engineers can innovate in this space.
🚀Stay Industry-Ready With form factors shrinking and complexity rising, stay on top of cutting-edge packaging tech and its role in tomorrow’s electronics.
Guests Bio :
Bhavesh Motwani :
Bhavesh Motwani is currently being enrolled in the MTech program in Semiconductor Technology at Nirma University. He is being trained as an intern at Monk9 Technology, where hands-on experience in semiconductor fabrication is being gained. His BTech degree in Electronics and Communication Engineering was completed at GEC Bharuch, affiliated with Gujarat Technological University. His initial interest in the field of Electronics and Communication was sparked by work in robotics and embedded systems. Several projects were undertaken using platforms like MSP430, Arduino, and ESP boards. Through this exploration, deeper curiosity about the internal working of these systems was developed, eventually leading him toward the field of VLSI and semiconductors. Due to limited lab access and software tools at his government college, Bhavesh was encouraged by a professor to pursue MTech at a reputed institution. At Nirma University, inspiration was drawn from Dr. N.M. Devashrayee, whose teaching in semiconductor fabrication and physics encouraged him to explore the domain in depth. This interest marked the beginning of his journey into semiconductor fabrication, packaging, assembly, and testing. As India’s semiconductor ecosystem continues to expand, Bhavesh is determined to contribute meaningfully and aspires to take on a leadership role in advancing the industry.
Jayshree Adwani :
Jayshree Adwani is currently being enrolled in the second year of the MTech program in Semiconductor Technology at Nirma University. She is undergoing internship training at MONK9, with a focus on the semiconductor fabrication domain. Her interest in semiconductors was cultivated during her undergraduate studies in Electronics and Communication Engineering at Charusat University. A six-month internship was completed at VERIFAST Technologies, which later transitioned into a full-time role where she worked for one year in the verification domain. While experience in verification and familiarity with communication protocols was gained, a stronger inclination toward fabrication was gradually developed. The ability to transform theoretical knowledge into physical semiconductor devices inspired her to pursue further studies focused on fabrication. Throughout her MTech program, comprehensive knowledge has been acquired in semiconductor physics, cleanroom processes, and fabrication flow — covering wafer processing, device physics, and IC manufacturing. This hands-on exposure has deepened her passion and expertise in the field. At Nirma University, Jayshree has also been actively involved in facilitating connections between academia and industry. Internship opportunities have been sought independently by her, both during and after her time at VERIFAST. She remains committed to contributing to India’s semiconductor growth and envisions herself playing a key role in this transformative industry.
🎓 Students & Graduates curious about semiconductors and looking to build a future in VLSI, chip fabrication, or related fields.
💼 Early-career professionals aiming to deepen their technical knowledge and explore new opportunities in the semiconductor industry.
🛠️ Engineers & Designers interested in the latest trends in chip manufacturing, AI, 5G, and fabrication technologies.
💡 Tech Enthusiasts & Hobbyists wanting to understand how chips power modern devices and innovations.
📚 Educators & Researchers seeking fresh insights into semiconductor processes and career pathways.
🔹 Why Attend? 🛠️ What Will Be Covered?
🔧 Simplify Complex Tech
Break down the jargon! Learn semiconductor concepts in a way that’s easy to understand — whether you’re a student, a professional, or just curious.
🏭 Explore Real-World Chipmaking
Get behind-the-scenes insights into how chips are actually made — from silicon wafers to system-ready ICs.
🇮🇳 Understand India’s Chip Mission
Learn how India is shaping its place in the global semiconductor race and what it means for engineers, startups, and investors.
🎓 Unlock Career Paths
Discover exciting roles in VLSI design, fabrication, packaging, and testing — and learn how to enter this fast-growing field.
👥 Network & Interact
Engage with experts, ask questions, and connect with others who share your interest in the semiconductor revolution.
🚀 Stay Ahead of the Curve
With the industry evolving fast, this webinar helps you stay updated, skilled, and future-ready.
Guests Bio :
Bhavesh Motwani :
Bhavesh Motwani is currently being enrolled in the MTech program in Semiconductor Technology at Nirma University. He is being trained as an intern at Monk9 Technology, where hands-on experience in semiconductor fabrication is being gained. His BTech degree in Electronics and Communication Engineering was completed at GEC Bharuch, affiliated with Gujarat Technological University. His initial interest in the field of Electronics and Communication was sparked by work in robotics and embedded systems. Several projects were undertaken using platforms like MSP430, Arduino, and ESP boards. Through this exploration, deeper curiosity about the internal working of these systems was developed, eventually leading him toward the field of VLSI and semiconductors. Due to limited lab access and software tools at his government college, Bhavesh was encouraged by a professor to pursue MTech at a reputed institution. At Nirma University, inspiration was drawn from Dr. N.M. Devashrayee, whose teaching in semiconductor fabrication and physics encouraged him to explore the domain in depth. This interest marked the beginning of his journey into semiconductor fabrication, packaging, assembly, and testing. As India’s semiconductor ecosystem continues to expand, Bhavesh is determined to contribute meaningfully and aspires to take on a leadership role in advancing the industry.
Jayshree Adwani :
Jayshree Adwani is currently being enrolled in the second year of the MTech program in Semiconductor Technology at Nirma University. She is undergoing internship training at MONK9, with a focus on the semiconductor fabrication domain. Her interest in semiconductors was cultivated during her undergraduate studies in Electronics and Communication Engineering at Charusat University. A six-month internship was completed at VERIFAST Technologies, which later transitioned into a full-time role where she worked for one year in the verification domain. While experience in verification and familiarity with communication protocols was gained, a stronger inclination toward fabrication was gradually developed. The ability to transform theoretical knowledge into physical semiconductor devices inspired her to pursue further studies focused on fabrication. Throughout her MTech program, comprehensive knowledge has been acquired in semiconductor physics, cleanroom processes, and fabrication flow — covering wafer processing, device physics, and IC manufacturing. This hands-on exposure has deepened her passion and expertise in the field. At Nirma University, Jayshree has also been actively involved in facilitating connections between academia and industry. Internship opportunities have been sought independently by her, both during and after her time at VERIFAST. She remains committed to contributing to India’s semiconductor growth and envisions herself playing a key role in this transformative industry.
In this enlightening episode of The Semiconductor Podcast, we sit down with Mr. Sanjeev Kumar Sharma, CEO and Co-founder of Sweden-based deep tech startup Exceldot.AB—a pioneering venture that blends semiconductors, IoT, and sustainability to tackle one of the planet’s most pressing challenges: groundwater monitoring and management. From his rich background in wireless technologies and semiconductor systems to leading innovative solutions for real-time water resource management, Sanjeev shares the origin story of Exceldots, the meaning behind its name, and the critical problem it was born to solve.
We explore:
• 🌊 The fascinating interplay between water and semiconductors
• 🌱 How Exceldots leverages AI + IoT in extreme rural environments
• 🛠️ The tech stack and architecture behind their intelligent groundwater solutions
• 🔐 Ensuring data accuracy, calibration, and security in decentralized deployments
• 📉 The crucial role of low-power design in sustainability tech
• 🌍 Scaling across geographies and working with governments and NGOs
Sanjeev also dives into:
• 🧠 Academia-industry collaboration and how Exceldots nurtures student talent
• 🇮🇳 His views on India–EU semiconductor cooperation
• 📈 The evolving landscape of IoT and semiconductors, especially in the Indian market
• 💡 Vision for STEM education, tech for good, and entrepreneurial advice for the next generation
Whether you're an IoT enthusiast, a policymaker, a startup founder, or a semiconductor engineer with a green heart—this episode will give you a fresh perspective on how deep tech can drive deep impact.
Scan the QR code and watch the episode .
In this podcast series, discussion on VLSI and its related fields is presented, focusing on recent developments and advancements in the industry. Topics such as the latest trends and innovations in semiconductor technology are explored, offering insights into the evolving landscape. Career guidance is shared, providing practical advice for navigating the field, along with success stories that highlight the journeys of professionals who have made their mark in VLSI. Whether for students, professionals, or those interested in the subject, valuable knowledge is offered to help stay informed and succeed in this dynamic area.
Guest : Mr. Sanjeev Kumar Sharma
Sanjeev Sharma serves as the CEO and Co-Founder of ExcelDots AB, a Stockholm-based technology company specializing in applied research for end-to-end IoT and AI solutions, particularly for sustainability initiatives within the water sector. He has been instrumental in the architecture of ASMITAS, a digital water platform dedicated to enhancing groundwater safety. Beyond his leadership at ExcelDots AB, Sanjeev plays a crucial role in fostering business connections for startups and scale-ups between India and the Nordic countries, and he additionally heads the Indian Electronics Semiconductor Association's Europe chapter.
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Welcome to another power-packed episode of 🎧 The Semiconductor Podcast (TSP)! In this episode, we’re joined by Mabi Nadaf — 👨🏫 Analog IC Design Engineer, 🎯 Semiconductor Career Strategist, and the visionary founder of 🏢 Anadiwave Semiconductor & 📚 GIICT.
From crafting circuits at Analog Devices, GlobalFoundries, and SanDisk 🏢⚙️ to mentoring India’s next-gen analog heroes 💪🇮🇳 — Mabi shares his remarkable journey from engineer ➡️ entrepreneur.
🔍 In this episode we have discussed :
✨ What inspired his switch to entrepreneurship 🧑💼
💥 Major risks he took and lessons learned 🛤️
🎓 How to know if analog design is your true calling 🔌❤️
🧑💻 What makes an engineer "Day One Ready" in analog?
📉 Why digital is over-hyped and analog overlooked
🌏 How India can bridge the industry-academia gap
📘 Must-read books & textbook sections you should NEVER skip!
🤖 The impact of AI on analog design today & tomorrow
🏫 Tips for Tier-2 & Tier-3 colleges to build analog fundamentals
🎁 Plus: Motivation for students, 🔁 upskilling tips for working engineers, and a vision for a strong analog ecosystem in 🇮🇳 India.
👉 If you're a student, a working professional, or an educator, this episode is your roadmap to analog success! 🛣️💡
📲 Watch now and share with your circuit-loving friends!
In this podcast series, discussion on VLSI and its related fields is presented, focusing on recent developments and advancements in the industry. Topics such as the latest trends and innovations in semiconductor technology are explored, offering insights into the evolving landscape. Career guidance is shared, providing practical advice for navigating the field, along with success stories that highlight the journeys of professionals who have made their mark in VLSI. Whether for students, professionals, or those interested in the subject, valuable knowledge is offered to help stay informed and succeed in this dynamic area.
Guest :Mr. Mabi Nadaf
Mabi Nadaf is a Semiconductor Career Strategist, Analog IC Design Engineer, and Founder & Director of GIICT (Global Institute of Integrated Circuit Technology). With over a decade of industry experience at Analog Devices, GlobalFoundries, and SanDisk, he is passionately bridging India’s industry-academia gap in analog design. As the founder of Anadiwave Semiconductor Pvt. Ltd., Mabi leads efforts to deliver silicon-proven PMIC IPs and industry-ready analog engineers. Through GIICT, India’s first hands-on, outcome-driven institute for analog IC design, he has empowered students, graduates, and working professionals with a structured roadmap, real-world projects, and 100% placement support. Mabi is committed to transforming careers and accelerating India’s semiconductor growth through innovation, mentorship, and collaboration.
🎙️ New to streaming or looking to level up? Check out StreamYard and get ₹740 discount! 😍 https://streamyard.com/pal/d/5468382652137472
In this deep-dive episode of The Semiconductor Podcast (TSP), we are joined by Mr. Shitendra Bhattacharya, Regional Director at Emerson’s Test and Measurement business group (formerly NI), who brings nearly two decades of experience in advancing test and measurement technologies across global and Indian markets.
Mr. Bhattacharya shares his incredible journey at NI, highlighting key milestones that shaped his professional trajectory and NI’s evolving role in India’s engineering ecosystem. We discuss how India’s market dynamics, policy landscape, and academic alignment differ from global trends — and what that means for the future of innovation in the country.
Key topics explored in the episode:
• 🚀 The evolution of NI's offerings and how Emerson is redefining test innovation
• 🇮🇳 India’s emerging opportunities in semiconductors, aerospace, defense, 5G, EVs, and R&D services
• 🧠 The critical role of AI/ML integration in modern chip validation workflows
• 🧪 How NI addresses real-world challenges in wafer-level testing, mixed-signal & RF validation, and automated test systems
• 🛠️ How LabVIEW, PXI-based modular instruments, and automated solutions empower scalable testing for complex systems
• 🎓 The importance of academia-industry collaboration and NI’s initiatives for university enablement and hands-on semiconductor education
• 🔗 Integration with leading EDA tools for seamless pre- and post-silicon handoffs
• 📈 GTM strategies tailored for India’s growing deeptech startup ecosystem
Whether you're a young engineer exploring the test & measurement domain or a founder navigating hardware prototyping and validation, this episode offers practical insights, strategic foresight, and a glimpse into how test is enabling India’s semiconductor and electronics revolution.
In this podcast series, discussion on VLSI and its related fields is presented, focusing on recent developments and advancements in the industry. Topics such as the latest trends and innovations in semiconductor technology are explored, offering insights into the evolving landscape. Career guidance is shared, providing practical advice for navigating the field, along with success stories that highlight the journeys of professionals who have made their mark in VLSI. Whether for students, professionals, or those interested in the subject, valuable knowledge is offered to help stay informed and succeed in this dynamic area.
Guest : Mr. Shitendra Bhattacharya,
Shitendra Bhattacharya is currently Regional Director, Emerson’s Test and Measurement business group and been associated with NI for 15 years. He has a BTech in Chemical Engg from National Institute of Technology, Warangal and a Global MBA from Indian School of Business along with stints at London Business School and Wharton. At NI, he has built teams to help enterprises, engineers and scientists accelerate their innovation and discovery in verticals focussed on Semiconductor, Electronics, Aero-Def, Automotive and Research. He is responsible for shaping aggressive market strategies and building solid teams involved in functions like Design, Design Verification (DV), Design-For-Test (DFT) and Security, Power management, etc. He is passionate about building and growing businesses and teams with a strategic vision, powerful execution, and focused on results. He is also a sector agnostic angel investor in start-ups who are disrupting markets and have a focus on the triple bottom line.
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In this power-packed episode of The Semiconductor Podcast, we delve into the remarkable journey of Kishore M.M.C, Founder and CEO of Global Marketing Services (GMS) a pioneering force that has quietly enabled India’s access to world-class technologies across semiconductors, EV batteries, MEMS, photonics, and more. 🔬⚡🚗
Founded over 24 years ago, GMS has grown from a bold idea to a vital technology bridge between global innovators and Indian customers—serving academic institutions like IISc and DRDO, commercial fabs, startups, and research labs across the country. 🏛️🤝🌍
In this in-depth conversation, Mr. Kishore opens up about:
🔹 The origin story of GMS: what inspired him to start, and the early challenges in a pre-ISM India 🛠️
🔹 India’s electronics landscape in the early 2000s vs. today’s ecosystem shift driven by AI, EVs, and ISM 🌄➡️🚀
🔹 Diversification across domains—from semiconductors and LED to battery tech and MEMS sensors 🧠🔋
🔹 How GMS selects international partners and brings cutting-edge solutions to India at the right time ⏳📦
🔹 Strategic collaborations with academia and government—navigating the unique needs of researchers and fabs 📚🏭
🔹 Emerging tech Mr. Kishore is excited about: silicon carbide, photonics, quantum, and the AI hardware revolution 💡🧬
He also reflects on leadership values, long-term goals for GMS, and the role of companies like his in shaping India’s position in the global semiconductor supply chain by 2030. 🌐🇮🇳
Mr. Kishore shares how logistics, awareness gaps, and timing challenges can be transformed into opportunities when guided by the right mindset, strong networks, and deep local understanding.
💡 Whether you’re a deeptech enthusiast, semiconductor founder, or student dreaming of building something meaningful—this episode offers rare insights from a veteran who has stayed ahead of the curve for over two decades.
🎧 Tune in to discover how vision, persistence, and quiet execution can spark revolutions in India's growing semiconductor story.
In this podcast series, discussion on VLSI and its related fields is presented, focusing on recent developments and advancements in the industry. Topics such as the latest trends and innovations in semiconductor technology are explored, offering insights into the evolving landscape. Career guidance is shared, providing practical advice for navigating the field, along with success stories that highlight the journeys of professionals who have made their mark in VLSI. Whether for students, professionals, or those interested in the subject, valuable knowledge is offered to help stay informed and succeed in this dynamic area.
Guest : Mr. MMC Kishore
Mr. MMC Kishore is a seasoned entrepreneur and business leader with over 30 years of experience in the technology and marketing industries. He is the Founder and CEO of Global Marketing Services (GMS), India — a company he established in January 2001, which has grown into a respected name in marketing solutions, known for its client-centric approach, innovative strategies, and strong organizational culture. Under his leadership, GMS has successfully executed numerous major projects, leveraging a well-built infrastructure and a dynamic team culture. His commitment to quality, consistency, and long-term partnerships has shaped GMS into a trusted provider across various sectors. Prior to founding GMS, Mr. Kishore served as a Sales Engineer at El Camino Technologies Pvt. Ltd. from 1994 to 2000, where he honed his skills in technical sales, customer engagement, and market development. He holds a Bachelor of Science (B.Sc.) in Instrumentation from Bangalore University (1989–1992) and completed his schooling at St. Paul's High School. With a career spanning over 24 years as a business owner and leader, Mr. Kishore continues to inspire through his strategic vision, operational excellence, and unwavering passion for growth and innovation.
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A free and open-source EDA tool (formerly Oscad/FreeEDA)
Integrated Simulation Cockpit Built on top of tools like KiCad, Ngspice, GHDL, OpenModelica, Verilator, and more
Supports the SkyWater SKY130 PDK
Released under the GNU GPL license
Why watch the video ?
Discover a cost-effective alternative to proprietary tools.
Learn circuit design, simulation, PCB layout, and mixed-signal analysis using open tools in a single GUI.
Perfect for students, educators, and SME/MSMEs aiming for self-reliant EDA workflows
🛠️ What Will Be Covered?
✅ Walkthrough of the eSim website, including download & installation steps
✅ Overview of the Spoken Tutorial (self-Paced-Learning) content related to eSim
✅ Live demo of eSim’s capabilities with simple example circuits
– LCR Circuit
– BJT Amplifier
– CMOS Inverter
✅ Hands-on view of schematic creation and waveform plotting
✅ Tailored content for academic users and learners
👥 Who Should Attend?
UG/PG Electronics Engineering Students (BSc/BTech/M.Sc/MTech/MS)
Faculty Members & Researchers
Lab Instructors & Technical Staff
Anyone seeking an open-source EDA solution
🎙️ New to streaming or looking to level up? Check out StreamYard and get ₹740 discount! 😍 https://streamyard.com/pal/d/5468382652137472
URLs :
eSim HomepageeSim TeamFOSSEE InternshipsSpoken Tutorial HomepageApplications of Spoken Tutorials
In this landmark episode of The Semiconductor Podcast (TSP), we sit down with a rare visionary — a serial entrepreneur, patent holder, and esteemed faculty at IIT Kharagpur — who has seamlessly bridged the worlds of academic research, chip design, and startup leadership. 🧑🏫💼📈
🔍 What sparks a Ph.D. holder to become a founder?
⚙️ How does deep research translate into high-impact leadership and innovation?
🌏 And what will it take to turn Eastern India into the next big semiconductor hub?
From his early days at Intel, Texas Instruments, and SanDisk to founding Sankalp Semiconductors and now leading Aantaric Technologies, our guest walks us through:
• The milestones, patents, and turning points that shaped his journey 🛤️
• How to build and lead 100+ strong high-performance analog design teams 🔧🔥
• The real-world role of AI/ML in analog and mixed-signal design 🤖📊
• How engineers can transition from “desk job survival” to patent-worthy innovation 💡📝
• His personal playbook for spotting research-backed, commercially viable ideas 🎯
But this episode is more than just a founder’s story — it’s a blueprint for ecosystem building.
Hear his passionate take on:
• Why Kolkata and Eastern India can be the next design powerhouse 🌉📡
• How institutions like IIT KGP, ISI, JU, NIT Durgapur, IIEST, and others can collaborate to build a deep tech and semiconductor ecosystem in the region 🏛️🧬
• Current initiatives, startup incubations, and what’s still missing for real momentum 🚀
👩💻 Whether you’re a student, engineer, policymaker, or startup dreamer, this conversation is packed with insights on leadership, innovation, and India's semiconductor potential.
🎧 Tune in to discover how to go from job seeker to job creator, from researcher to founder — and from follower to pioneer in India’s chip revolution. 🇮🇳✨
In this podcast series, discussion on VLSI and its related fields is presented, focusing on recent developments and advancements in the industry. Topics such as the latest trends and innovations in semiconductor technology are explored, offering insights into the evolving landscape. Career guidance is shared, providing practical advice for navigating the field, along with success stories that highlight the journeys of professionals who have made their mark in VLSI. Whether for students, professionals, or those interested in the subject, valuable knowledge is offered to help stay informed and succeed in this dynamic area.
Guest : Dr. Prajit Nandi
Prajit Nandi is a distinguished faculty member in the Department of Electrical Engineering at the Indian Institute of Technology (IIT) Kharagpur. With over 20 years of extensive experience in semiconductor product development, he has held pivotal roles in renowned multinational companies such as Intel, SanDisk, and Texas Instruments.
He is a founding team member of Sankalp Semiconductor Pvt. Ltd. (now part of HCL Technologies), where he played a critical role in incubating the Analog Design Team from STEP, IIT Kharagpur. He also established and scaled Sankalp’s Kolkata Design Center, building a robust team of over 100 engineers. Under his leadership, the center built strong analog design verticals in Data Converters, Power Management, and Clocking Systems, successfully serving top-tier clients including Analog Devices, Cadence, Nuvoton, STMicroelectronics, Toshiba, and Texas Instruments.
Prajit has mentored and trained numerous engineers, many of whom are now contributing to leading semiconductor firms in India and around the world. He is currently associated with Texas Instruments, where he works in the High-Speed Data Converter Group of the Analog Signal Chain Business Unit, contributing to the development of world-class high-performance data converters. He holds the rare distinction of serving as Design Architect and Product Lead in both the Analog Power Products (Automotive) and Analog Signal Chain business units at TI.
His research interests lie in Wireline Communications and Signal Chain Design. He holds 8 US patents, and has published 4 journal papers and 4 conference papers. Additionally, he serves as a technical advisor to Aantaric Technologies Pvt. Ltd.
🔗 Prajit Nandi – Aantaric Technologies
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In this article, we have explored critical aspects of reliability and integrated circuit (IC) failure in VLSI systems, with a focus on understanding the root causes and mechanisms behind these failures. The discussion begins with the fundamentals of CMOS IC failure and delves into the properties of interconnect metals, including their crystal structures, which influence performance and longevity. We examine key reliability concerns such as electromigration, metal stress voiding, and their implications on metal interconnects, especially in the context of copper-based technologies covered in two detailed segments. The article also investigates the structure of gate oxides, common defect types, and their role in determining gate oxide reliability in MOS devices, presented through a two-part explanation. Finally, we analyze the mechanisms behind ultrathin oxide breakdown and broader oxide failure modes, providing a comprehensive overview of reliability challenges in advanced semiconductor devices.
Understanding CMOS IC Failure :
As semiconductor technology continues to scale down and performance demands rise, ensuring the reliability of materials used in integrated circuits (ICs) has become increasingly critical. IC failure is often the result of complex interactions between electrical, thermal, mechanical, and environmental stresses acting on the materials within a device. From the integrity of interconnect metals to the robustness of gate dielectrics, each material layer plays a vital role in determining the long-term functionality and durability of an IC. Failures can manifest as performance degradation, intermittent faults, or catastrophic breakdowns, impacting both product quality and life cycle. Understanding the key mechanisms that contribute to material-related failures—such as electromigration, dielectric breakdown, thermal stress, and electrostatic discharge—is essential for designing more reliable, high-performance semiconductor devices.
1. Metal failures: Electromigration, Stress Voiding
2. Oxide failures: Wearout, breakdown, HCI, NBTI
Engineering Challenges: Deep-submicron CMOS ICs need robust reliability models. Understanding these failure mechanisms is critical for chip longevity.
Interconnect Metals & Crystal Structure :
Metal Grains & Grain Boundaries : Interconnect metals are made of small, single crystals called grains. Grain surfaces are irregular and influence metal resistance. Grain boundaries (1–2 atoms wide) act as pathways for atomic movement. Fewer grain boundaries means stronger metal, as atoms have fewer paths to dislocate.
Metal Defects & Their Effects :
1. Types of defects:
(a) Interstitial defects : Small atoms like B & H fit between larger metal atoms.
(b) Substitutional defects : Atoms like Copper (Cu) replace Aluminum (Al) for strength.
(c) Vacancies : Missing atoms due to thermal vibrations, increasing with temperature.
2. Line & Area Defects:
Edge dislocations introduce stress points. Grain boundaries influence atomic motion and metal stability.
Metal Atom Motion & Failure Mechanisms :
1. Driving Forces for Atom Migration: Concentration gradient (Diffusion) , Temperature gradient (Thermotransport) , Voltage gradient (Electromigration) , Stress gradient (Stress voiding)
2. Electromigration & Stress Voiding: Major causes of metal failure in ICs.
Impact of Temperature on Metal Reliability :
Diffusion rate (D) increases exponentially with temperature. Modern ICs operate above 100°C, increasing metal atom mobility and potential failures. Understanding metal grain structures, atomic motion, and thermal effects is crucial for improving IC reliability and preventing failures due to electromigration and stress voiding.
Electromigration & Metal Reliability :
Electromigration (EM) is movement of metal atoms due to electron flow & temperature. Failure occurs when high current density & temperature cause, voids/material loss or extrusions/material accumulation.
Historical impact: Almost halted IC development in the 1960s until controlled methods were found.
Electron momentum transfer nudges thermally active metal atoms out of position. Aluminum (Al) atoms move in the direction of electron flow if a vacancy is available. Stress regions are formed i.e. tensile stress is formed where atoms leave or voids and compressive stress is formed where atoms accumulate I.e in place of extrusion.
Factors Affecting Electromigration :
(1) Atomic flux i.e. the rate of metal atom displacement.
(2) Current density. Higher current increases electromigration risk.
(3) Temperature. Higher temperature boosts atomic movement.
(4) Material properties. Al vs. Cu have different EM behaviors.
(5) Stress gradients. Areas of high tension/compression drive atomic motion.
Preventing Electromigration Failures: Copper (Cu) is more EM-resistant than Aluminum (Al), Use of wider metal lines to reduce current density. Addition of barrier layers to slow atomic movement. Optimizing temperature control in IC packaging. Electromigration is a critical reliability challenge in IC design, but proper material selection and design strategies help mitigate failures and extend device lifespan.
Metal Stress Voiding :
Discovered in the early 1980s. Differences in the thermal coefficient of expansion (TCE) between metal and surrounding passivation materials.
Three Key Conditions for Stress Voiding:
1. High Stress in the Metal : Caused by thermal expansion mismatches between metal and passivation which leads to mechanical strain in the metal structure. During fabrication, metal expands at high temperatures (~400°C) and bonds to passivation. When cooled to room temperature, metal contracts while passivation remains stable, creating high tensile stress.
2. Presence of a Defect: Small imperfections or void nuclei provide a starting point for stress concentration.The stress gradient formed encourages atomic movement.
3. Diffusion Path & Sufficient Temperature: Metal atoms need a way to move—grain boundaries typically act as diffusion paths. Elevated temperature enables atomic migration, allowing the void to grow.
When all three above conditions are met, stress voiding can lead to open circuits and device failure over time. Failure timing varies, could happen during fabrication, if metal quality is poor . If stress accumulates over time, can happen weeks or years later.
Ways to reduce stress voiding:
- Optimizing metal deposition techniques,
- Using stress-buffering layers,
- Control temperature variations during processing.
Stress voiding is a major reliability issue in ICs, caused by thermal expansion mismatches. Proper material selection and stress management techniques are essential to minimize failures.
Copper Interconnect Reliability :
Cu replaced Al in high-performance ICs due to its lower resistivity and higher melting point. This results in faster circuits with reduced RC time constants. However, Cu interconnects introduced new reliability challenges.
Electromigration in Copper : Still occurs despite stronger bonds, with activation energy (~0.8 eV) similar to Al. Unlike Al, Cu electromigrates at the Cu–passivation interface due to its weaker adhesion to the passivation layer. Higher granularity in Cu increases migration at grain boundaries.
Solution: Improvements in Cu processing techniques have increased activation energy, improving reliability.
High Diffusivity in Si & SiO₂ : Cu easily diffuses into silicon and oxide, contaminating ICs and degrading pn junctions. Barrier metals are used to contain Cu, preventing leakage. Tungsten (W) is used in the first metal layer to further separate Cu from transistor junctions.
Electromigration Failures in Vias : Cu vias require barrier liners, but failures often occur where the liner intersects Cu. Flux divergence at the bottom of vias creates voiding issues. 20% via voiding can lead to excess heat and cause the liner to fail thermally.
Stress-Induced Voiding (SIV) in Cu : Stress voiding can weaken Cu interconnects, making them vulnerable to EM failures. Wide metal leads feeding vias experience more stress voiding than narrow leads.
Solution: Strict design rules mitigate SIV by optimizing via location, metal width, and layout design.
Dual-Damascene Process Complexity : Unlike Al, Cu is not sputtered but deposited via a dual-damascene process. The quality of the Cu seed layer affects grain structure, influencing EM resistance.
Reliability of Cu with Low-k Dielectrics : SiLK™ (a polymer based low-k dielectric) reduces capacitance but worsens Cu electromigration reliability. Cu–SiLK™ t₅₀ values (time to 50% failure) were 3–5× lower than Cu–oxide interfaces.
Solution : Using barrier metals, optimized via layouts, improved Cu processing help mitigate Cu electromigration and stress voiding issues.
Oxide Structure & Defects :
Importance of Gate Oxides: Gate oxides, typically made of SiO₂ (silicon dioxide), are crucial for controlling channel charge in MOS transistors. Quality and thickness of these oxides are vital to transistor performance.
Historical Context: In the 1970s, oxide thickness was around 750 Å; today, it’s under 20 Å.Gate oxide electric fields in the early 2000s exceeded burn-in field strengths from the 1990s.
Challenges with Oxide Quality: Poor oxide quality leads to longer time to market and customer dissatisfaction.
Key Oxide Failure Mechanisms:
1. Wearout, 2. Hot Carrier Injection (HCI), 3.Negative Bias Temperature Instability (NBTI) (specific to pMOS transistors)
Understanding Oxide Structure: Imperfections at the Si-SiO₂ interface lead to unfilled bonds, creating sites for charge exchange. SiO₂ consists of Si atoms bonded to O atoms in tetrahedral structures. Bond angles vary (120° to 180°), weakening as they deviate from the mean (150°), contributing to oxide wearout.
Defects and Traps:
1. Traps : Defects in the oxide where charge can accumulate,impacting transistor performance.
2. Interface Traps: Located at the Si-SiO₂ interface, these traps can quickly exchange charge with channel carriers.
3. Border and Fixed Traps: Border traps are between 25 - 50 Å deep. Fixed traps are deeper than 50 Å and do not exchange charge, less relevant for modern failure mechanisms.
4. Impact on Performance: Charge exchange with oxide traps negatively affects transistor speed and reliability.
Gate Oxide Reliability in MOS :
Oxide Wearout : Good oxides can wear out and rupture when continuously subjected to charge injection. This failure is not related to fabrication defects; it’s a different mechanism that remains poorly understood despite extensive research.
Charge Injection and Failure: Every time a voltage is applied to a logic circuit’s gate oxide, a small amount of charge is injected into the oxide.
Impact on Product Lifetime: Oxide wearout time must exceed the expected lifetime of the product to avoid failure during usage. Miscalculations in wearout time can lead to severe consequences if premature oxide failure occurs.
Effect of Oxide Stress: Oxide wearout time decreases as stress on the oxide increases. Thin oxides, with their higher voltages and electric fields, are especially susceptible to premature wearout.
Oxide Field Strength: The oxide field strength is the force driving electrons across the oxide. As transistors continue to shrink (e.g., deep-submicron), oxide field strength increases, accelerating wearout.
Technological Trends: Since the late 1980s, as technologies have advanced, oxide field strength has progressively risen, intensifying the wearout risk for modern deep-submicron transistors.
Electron Tunneling in Thin Oxides: Significant tunneling occurs when oxide thickness is less than 40 Å, with tunneling current becoming worse as oxide thickness decreases to 20 Å or 15 Å. Increased gate currents from tunneling are key concerns for reliability and power in modern ICs.
Early Research and Breakdown: Early studies on transistor gate oxide shorts showed that gate capacitance could store enough energy to cause damage when a breakdown occurs. This energy release melts the silicon at the oxide interface, causing physical bonding of the polysilicon gate to the silicon substrate, leading to parasitic diodes or resistors.
Technology Scaling: As transistor technologies scaled, supply voltages dropped from 5-10 V to 1.0-1.2 V, and gate dimensions shrank from 1–5 µm to 90–130 nm.Gate capacitance decreased significantly, reducing the stored energy that caused violent thermal ruptures, shifting to more gradual breakdowns.
Oxide Wearout and Breakdown Models: Older thick oxides (>40 Å) have a different breakdown model than current ultrathin oxides (<30 Å). Breakdown in Ultrathin Oxides results in "soft breakdown," which increases noise in gate voltage or but does not cause immediate catastrophic failures.
Soft vs. Hard Breakdown:
1. Soft Breakdown (SBD): Occurs at low voltages and results in permanent gate current increase and noise. It is thought to be caused by trap-assisted conduction.
2. Hard Breakdown (HBD): Seen in older, thicker oxides. It causes severe gate voltage or current changes due to thermal events that merge materials above and below the oxide.
Ultrathin Oxide Breakdown :
Ultrathin Oxide Breakdown Stages:
1. Wearout: Gradual defect generation in the oxide until a conductive path is formed (percolation model).
2. Soft Breakdown: Leads to a permanent increase in gate current and noise at low voltages.
3. Hard Breakdown: Results in a continuous exponential increase in gate current.
Breakdown and Gate Voltage:
Breakdown time is related to gate voltage and oxide thickness. Electrons tunnel through the oxide, gaining energy and causing bond breakage when they strike the anode, which can release hydrogen ions (AHR) or create holes (AHI) that damage the oxide.
Percolation Model: The wearout and breakdown process involves the accumulation of damage sites (traps) in the oxide. When enough traps are aligned in a path, a thermally damaging current can flow through the oxide.
Transistor Behavior with Ultrathin Oxides:
Transistor Impact: Soft breakdown in ultrathin oxides has negligible impact on transistor performance, including gate voltage and transconductance.
Hard Breakdown: More severe and observed in nMOSFETs, especially in the gate-to-drain region. Soft breakdowns occur in the gate-to-source and gate-to-channel regions, with minimal effect on pMOSFETs.
Reliability Concerns:
Inverters: Oxide breakdowns weaken logic voltages, compromising noise margins and potentially causing functional failures in circuits.
Gate Stress: Greater stress on nMOS transistors occurs when the gate voltage is 0V, and drain voltage is V_dd, indicating a need for careful management of stress conditions. This breakdown and wearout model for ultrathin oxides highlights the shift from violent breakdowns in older technologies to more subtle, gradual failures in modern transistors, with implications for reliability in IC design.
Key Challenge: Data for high oxide field stress (>8 MV/cm) overlap for both models Long-term wearout studies take months/years Lower field & high-temp tests favored E-model for user conditions.
Key Oxide Failure Mechanism :
1. Hot Carrier Injection (HCI)
2. Defect-Induced Oxide Breakdown
3. Process-Induced Oxide Damage
4. Negative Bias Temperature Instability (NBTI)
Oxide Failure Mechanism :
Hot Carrier Injection: High drain-to-channel field accelerates carriers, causing , (1)Impact ionization → Electron-hole pairs scatter , (2) Some carriers enter the oxide, leading to trap formation . Affects transistor parameters.
Key Factors Influencing HCI: Higher supply voltage than design specs, Short channel lengths, Poor oxide interface or drain–substrate junctions etc. HCI is a gradual degradation, not catastrophic failure. HCI occurs during logic transitions, not in steady states.
